SIB417EDK-T1-GE3 - MOSFET P-CH 8V 9A SC75-6

Framleiðanda Part Number
Innri Part Number
framleiðanda
Stutt lýsing
MOSFET P-CH 8V 9A SC75-6
RoHS Staða
Lead frjáls / RoHS samhæft
Sendingartími
1-2 daga
Laus Magn
1056015 Pieces
Tilvísun verð
USD 0.26568
Okkar verð
- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

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forskriftir fyrir SIB417EDK-T1-GE3

gæði ábyrgð : 365 dagar ábyrgð
Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein
Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Part Number : SIB417EDK-T1-GE3
framleiðanda : Vishay Siliconix
Lýsing : MOSFET P-CH 8V 9A SC75-6
Series : TrenchFET®
Hluti staða : Active
FET gerð : P-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 8V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 9A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 1.2V, 4.5V
Rds On (Max) @ Id, Vgs : 58 mOhm @ 5.8A, 4.5V
Vgs (th) (Max) @ kt : 1V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs : 12nC @ 5V
Vgs (hámark) : ±5V
Inntaksrýmd (Ciss) (Max) @ Vds : 565pF @ 4V
FET lögun : -
Dreifing orku (Max) : 2.4W (Ta), 13W (Tc)
Vinnuhitastig : -55°C ~ 150°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : PowerPAK® SC-75-6L Single
Pakki / mál : PowerPAK® SC-75-6L
þyngd : -
ástand : Nýtt og frumlegt
Tengt : SIB41 , SIB417ED

skjöl fyrir SIB417EDK-T1-GE3

datasheets : SIB417EDK-T1-GE3.pdf

Tengdar vörur fyrir SIB417EDK-T1-GE3 Vishay Siliconix

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