RS1E200BNTB - MOSFET N-CH 30V 20A 8HSOP
Framleiðanda Part Number
Innri Part Number
AX-RS1E200BNTB
framleiðanda
Stutt lýsing
MOSFET N-CH 30V 20A 8HSOP
RoHS Staða
Lead frjáls / RoHS samhæft
Sendingartími
1-2 daga
Laus Magn
2472800 Pieces
Tilvísun verð
Okkar verð
- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])
- AX Hálfleiðari með RS1E200BNTB á lager að selja.
- Siglinga valkosti og skipum tími:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- greiðslumöguleikar:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
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forskriftir fyrir RS1E200BNTB
gæði ábyrgð :
365 dagar ábyrgð
Stock Resource :
Franchised dreifingaraðili / Framleiðandi Bein
Upprunaland :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Part Number :
RS1E200BNTB
framleiðanda :
Rohm Semiconductor
Lýsing :
MOSFET N-CH 30V 20A 8HSOP
Series :
-
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
20A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
3.9 mOhm @ 20A, 10V
Vgs (th) (Max) @ kt :
2.5V @ 1mA
Hliðargjald (Qg) (Max) @ Vgs :
59nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
3100pF @ 15V
FET lögun :
-
Dreifing orku (Max) :
3W (Ta), 25W (Tc)
Vinnuhitastig :
150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
8-HSOP
Pakki / mál :
8-PowerTDFN
þyngd :
-
ástand :
Nýtt og frumlegt
skjöl fyrir RS1E200BNTB
datasheets :
RS1E200BNTB.pdf
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