SI3900DV-T1-E3 - MOSFET 2N-CH 20V 2A 6-TSOP

Framleiðanda Part Number
Innri Part Number
framleiðanda
Stutt lýsing
MOSFET 2N-CH 20V 2A 6-TSOP
RoHS Staða
Lead frjáls / RoHS samhæft
Sendingartími
1-2 daga
Laus Magn
1724210 Pieces
Tilvísun verð
USD 0.16272
Okkar verð
- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

AX Hálfleiðari með SI3900DV-T1-E3 á lager að selja.
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forskriftir fyrir SI3900DV-T1-E3

gæði ábyrgð : 365 dagar ábyrgð
Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein
Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Part Number : SI3900DV-T1-E3
framleiðanda : Vishay Siliconix
Lýsing : MOSFET 2N-CH 20V 2A 6-TSOP
Series : TrenchFET®
Hluti staða : Active
FET gerð : 2 N-Channel (Dual)
FET lögun : Logic Level Gate
Afrennsli að uppspennu (Vdss) : 20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 2A
Rds On (Max) @ Id, Vgs : 125 mOhm @ 2.4A, 4.5V
Vgs (th) (Max) @ kt : 1.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs : 4nC @ 4.5V
Inntaksrýmd (Ciss) (Max) @ Vds : -
Afl - Max : 830mW
Vinnuhitastig : -55°C ~ 150°C (TJ)
Festingargerð : Surface Mount
Pakki / mál : SOT-23-6 Thin, TSOT-23-6
Birgir tæki pakki : 6-TSOP
þyngd : -
ástand : Nýtt og frumlegt
Tengt : SI39 , SI3900D

skjöl fyrir SI3900DV-T1-E3

datasheets : SI3900DV-T1-E3.pdf

Tengdar vörur fyrir SI3900DV-T1-E3 Vishay Siliconix

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