IPP041N12N3GXKSA1 - MOSFET N-CH 120V 120A TO220-3

Framleiðanda Part Number

IPP041N12N3GXKSA1

Innri Part Number

AX-IPP041N12N3GXKSA1

framleiðanda

Infineon Technologies

Stutt lýsing

MOSFET N-CH 120V 120A TO220-3

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

67860 Pieces

Tilvísun verð

~~USD 4.134~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

AX Hálfleiðari með IPP041N12N3GXKSA1 á lager að selja.

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forskriftir fyrir IPP041N12N3GXKSA1

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : IPP041N12N3GXKSA1

framleiðanda : Infineon Technologies

Lýsing : MOSFET N-CH 120V 120A TO220-3

Series : OptiMOS™

Hluti staða : Active

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 120V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 120A (Tc)

Drifspenna (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 4.1 mOhm @ 100A, 10V

Vgs (th) (Max) @ kt : 4V @ 270µA

Hliðargjald (Qg) (Max) @ Vgs : 211nC @ 10V

Vgs (hámark) : ±20V

Inntaksrýmd (Ciss) (Max) @ Vds : 13800pF @ 60V

FET lögun : -

Dreifing orku (Max) : 300W (Tc)

Vinnuhitastig : -55°C ~ 175°C (TJ)

Festingargerð : Through Hole

Birgir tæki pakki : PG-TO220-3

Pakki / mál : TO-220-3

þyngd : -

ástand : Nýtt og frumlegt

Tengt : IPP04 , IPP041N1

skjöl fyrir IPP041N12N3GXKSA1

datasheets : IPP041N12N3GXKSA1.pdf

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