NP33N06YDG-E1-AY - MOSFET N-CH 60V 33A 8HSON

Framleiðanda Part Number

NP33N06YDG-E1-AY

Innri Part Number

AX-NP33N06YDG-E1-AY

framleiðanda

Renesas Electronics America

Stutt lýsing

MOSFET N-CH 60V 33A 8HSON

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

66710 Pieces

Tilvísun verð

~~USD 0~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

AX Hálfleiðari með NP33N06YDG-E1-AY á lager að selja.

Siglinga valkosti og skipum tími:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

greiðslumöguleikar:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

forskriftir fyrir NP33N06YDG-E1-AY

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : NP33N06YDG-E1-AY

framleiðanda : Renesas Electronics America

Lýsing : MOSFET N-CH 60V 33A 8HSON

Series : -

Hluti staða : Active

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 60V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 33A (Tc)

Drifspenna (Max Rds On, Min Rds On) : 5V, 10V

Rds On (Max) @ Id, Vgs : 14 mOhm @ 16.5A, 10V

Vgs (th) (Max) @ kt : 2.5V @ 250µA

Hliðargjald (Qg) (Max) @ Vgs : 78nC @ 10V

Vgs (hámark) : ±20V

Inntaksrýmd (Ciss) (Max) @ Vds : 3900pF @ 25V

FET lögun : -

Dreifing orku (Max) : 1W (Ta), 97W (Tc)

Vinnuhitastig : 175°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : 8-HSON

Pakki / mál : 8-SMD, Flat Lead Exposed Pad

þyngd : -

ástand : Nýtt og frumlegt

Tengt : NP33N , NP33N06Y

skjöl fyrir NP33N06YDG-E1-AY

datasheets : NP33N06YDG-E1-AY.pdf

Tengdar vörur fyrir NP33N06YDG-E1-AY Renesas Electronics America

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