IRFBE30S - MOSFET N-CH 800V 4.1A D2PAK

Framleiðanda Part Number

IRFBE30S

Innri Part Number

AX-IRFBE30S

framleiðanda

Vishay Siliconix

Stutt lýsing

MOSFET N-CH 800V 4.1A D2PAK

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

63890 Pieces

Tilvísun verð

~~USD 0~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

AX Hálfleiðari með IRFBE30S á lager að selja.

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forskriftir fyrir IRFBE30S

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : IRFBE30S

framleiðanda : Vishay Siliconix

Lýsing : MOSFET N-CH 800V 4.1A D2PAK

Series : -

Hluti staða : Obsolete

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 800V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 4.1A (Tc)

Drifspenna (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 3 Ohm @ 2.5A, 10V

Vgs (th) (Max) @ kt : 4V @ 250µA

Hliðargjald (Qg) (Max) @ Vgs : 78nC @ 10V

Vgs (hámark) : ±20V

Inntaksrýmd (Ciss) (Max) @ Vds : 1300pF @ 25V

FET lögun : -

Dreifing orku (Max) : 125W (Tc)

Vinnuhitastig : -55°C ~ 150°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : D2PAK

Pakki / mál : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

þyngd : -

ástand : Nýtt og frumlegt

Tengt : IR , IRFB

skjöl fyrir IRFBE30S

datasheets : IRFBE30S.pdf

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