IPD60N10S4L12ATMA1 - MOSFET N-CH TO252-3

Framleiðanda Part Number

IPD60N10S4L12ATMA1

Innri Part Number

AX-IPD60N10S4L12ATMA1

framleiðanda

Infineon Technologies

Stutt lýsing

MOSFET N-CH TO252-3

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

868780 Pieces

Tilvísun verð

~~USD 0.322938~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

AX Hálfleiðari með IPD60N10S4L12ATMA1 á lager að selja.

Siglinga valkosti og skipum tími:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

greiðslumöguleikar:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

forskriftir fyrir IPD60N10S4L12ATMA1

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : IPD60N10S4L12ATMA1

framleiðanda : Infineon Technologies

Lýsing : MOSFET N-CH TO252-3

Series : Automotive, AEC-Q101, HEXFET®

Hluti staða : Active

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 100V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 60A (Tc)

Drifspenna (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 12 mOhm @ 60A, 10V

Vgs (th) (Max) @ kt : 2.1V @ 46µA

Hliðargjald (Qg) (Max) @ Vgs : 49nC @ 10V

Vgs (hámark) : ±16V

Inntaksrýmd (Ciss) (Max) @ Vds : 3170pF @ 25V

FET lögun : -

Dreifing orku (Max) : 94W (Tc)

Vinnuhitastig : -55°C ~ 175°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : PG-TO252-3-313

Pakki / mál : TO-252-3, DPak (2 Leads + Tab), SC-63

þyngd : -

ástand : Nýtt og frumlegt

Tengt : IPD60N , IPD60N10S

skjöl fyrir IPD60N10S4L12ATMA1

datasheets : IPD60N10S4L12ATMA1.pdf

Tengdar vörur fyrir IPD60N10S4L12ATMA1 Infineon Technologies

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