IRFD224 - MOSFET N-CH 250V 630MA 4-DIP

Framleiðanda Part Number
Innri Part Number
framleiðanda
Stutt lýsing
MOSFET N-CH 250V 630MA 4-DIP
RoHS Staða
Lead frjáls / RoHS samhæft
Sendingartími
1-2 daga
Laus Magn
451500 Pieces
Tilvísun verð
USD 0.621396
Okkar verð
- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

AX Hálfleiðari með IRFD224 á lager að selja.
Siglinga valkosti og skipum tími:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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Bank Transfer (Wire Transfer)
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forskriftir fyrir IRFD224

gæði ábyrgð : 365 dagar ábyrgð
Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein
Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Part Number : IRFD224
framleiðanda : Vishay Siliconix
Lýsing : MOSFET N-CH 250V 630MA 4-DIP
Series : -
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 250V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 630mA (Ta)
Drifspenna (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.1 Ohm @ 380mA, 10V
Vgs (th) (Max) @ kt : 4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs : 14nC @ 10V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 260pF @ 25V
FET lögun : -
Dreifing orku (Max) : 1W (Ta)
Vinnuhitastig : -55°C ~ 150°C (TJ)
Festingargerð : Through Hole
Birgir tæki pakki : 4-DIP, Hexdip, HVMDIP
Pakki / mál : 4-DIP (0.300", 7.62mm)
þyngd : -
ástand : Nýtt og frumlegt
Tengt : IR , IRF

skjöl fyrir IRFD224

datasheets : IRFD224.pdf

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