DMJ70H900HJ3 - MOSFET BVDSS 651V 800V TO251

Framleiðanda Part Number

DMJ70H900HJ3

Innri Part Number

AX-DMJ70H900HJ3

framleiðanda

Diodes Incorporated

Stutt lýsing

MOSFET BVDSS 651V 800V TO251

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

323020 Pieces

Tilvísun verð

~~USD 0.86856~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

AX Hálfleiðari með DMJ70H900HJ3 á lager að selja.

Siglinga valkosti og skipum tími:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

greiðslumöguleikar:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

forskriftir fyrir DMJ70H900HJ3

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : DMJ70H900HJ3

framleiðanda : Diodes Incorporated

Lýsing : MOSFET BVDSS 651V 800V TO251

Series : Automotive, AEC-Q101

Hluti staða : Active

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 700V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 7A (Tc)

Drifspenna (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 900 mOhm @ 1.5A, 10V

Vgs (th) (Max) @ kt : 4V @ 250µA

Hliðargjald (Qg) (Max) @ Vgs : 18.4nC @ 10V

Vgs (hámark) : ±30V

Inntaksrýmd (Ciss) (Max) @ Vds : 603pF @ 50V

FET lögun : -

Dreifing orku (Max) : 68W (Tc)

Vinnuhitastig : -55°C ~ 150°C (TJ)

Festingargerð : Through Hole

Birgir tæki pakki : TO-251

Pakki / mál : TO-251-3, IPak, Short Leads

þyngd : -

ástand : Nýtt og frumlegt

Tengt : DMJ7 , DMJ70H

skjöl fyrir DMJ70H900HJ3

datasheets : DMJ70H900HJ3.pdf

Tengdar vörur fyrir DMJ70H900HJ3 Diodes Incorporated

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