IRF640NPBF - MOSFET N-CH 200V 18A TO-220AB

Framleiðanda Part Number
Innri Part Number
framleiðanda
Stutt lýsing
MOSFET N-CH 200V 18A TO-220AB
RoHS Staða
Lead frjáls / RoHS samhæft
Sendingartími
1-2 daga
Laus Magn
365315 Pieces
Tilvísun verð
USD 0.768
Okkar verð
- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

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forskriftir fyrir IRF640NPBF

gæði ábyrgð : 365 dagar ábyrgð
Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein
Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Part Number : IRF640NPBF
framleiðanda : Infineon Technologies
Lýsing : MOSFET N-CH 200V 18A TO-220AB
Series : HEXFET®
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 200V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 18A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 150 mOhm @ 11A, 10V
Vgs (th) (Max) @ kt : 4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs : 67nC @ 10V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 1160pF @ 25V
FET lögun : -
Dreifing orku (Max) : 150W (Tc)
Vinnuhitastig : -55°C ~ 175°C (TJ)
Festingargerð : Through Hole
Birgir tæki pakki : TO-220AB
Pakki / mál : TO-220-3
þyngd : -
ástand : Nýtt og frumlegt
Tengt : IRF , IRF64

skjöl fyrir IRF640NPBF

datasheets : IRF640NPBF.pdf

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