H7N1002LSTL-E - MOSFET N-CH 100V LDPAK

Framleiðanda Part Number

H7N1002LSTL-E

Innri Part Number

AX-H7N1002LSTL-E

framleiðanda

Renesas Electronics America

Stutt lýsing

MOSFET N-CH 100V LDPAK

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

21736 Pieces

Tilvísun verð

~~USD 0~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

AX Hálfleiðari með H7N1002LSTL-E á lager að selja.

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forskriftir fyrir H7N1002LSTL-E

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : H7N1002LSTL-E

framleiðanda : Renesas Electronics America

Lýsing : MOSFET N-CH 100V LDPAK

Series : -

Hluti staða : Active

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 100V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 75A (Ta)

Drifspenna (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 10 mOhm @ 37.5A, 10V

Vgs (th) (Max) @ kt : -

Hliðargjald (Qg) (Max) @ Vgs : 155nC @ 10V

Vgs (hámark) : ±20V

Inntaksrýmd (Ciss) (Max) @ Vds : 9700pF @ 10V

FET lögun : -

Dreifing orku (Max) : 100W (Tc)

Vinnuhitastig : 150°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : 4-LDPAK

Pakki / mál : SC-83

þyngd : -

ástand : Nýtt og frumlegt

Tengt : H7N1 , H7N100

skjöl fyrir H7N1002LSTL-E

datasheets : H7N1002LSTL-E.pdf

Tengdar vörur fyrir H7N1002LSTL-E Renesas Electronics America

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