forskriftir fyrir SSM6H19NU,LF

Part Number : SSM6H19NU,LF
framleiðanda : Toshiba Semiconductor and Storage
Lýsing : MOSFET N-CH 40V 2A 6UDFN
Series : U-MOSVII-H
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 40V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 2A (Ta)
Drifspenna (Max Rds On, Min Rds On) : 1.8V, 8V
Rds On (Max) @ Id, Vgs : 185 mOhm @ 1A, 8V
Vgs (th) (Max) @ kt : 1.2V @ 1mA
Hliðargjald (Qg) (Max) @ Vgs : 2.2nC @ 4.2V
Vgs (hámark) : ±12V
Inntaksrýmd (Ciss) (Max) @ Vds : 130pF @ 10V
FET lögun : -
Dreifing orku (Max) : 1W (Ta)
Vinnuhitastig : 150°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : 6-UDFN (2x2)
Pakki / mál : 6-UDFN Exposed Pad
þyngd : -
ástand : Nýtt og frumlegt
gæði ábyrgð : 365 dagar ábyrgð
Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein
Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Framleiðanda Part Number
Innri Part Number
Stutt lýsing
MOSFET N-CH 40V 2A 6UDFN
RoHS Staða
Lead frjáls / RoHS samhæft
Sendingartími
1-2 daga
Laus Magn
4645870 Pieces
Tilvísun verð
USD 0
Okkar verð
- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

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