forskriftir fyrir SIHH21N65EF-T1-GE3

Part Number : SIHH21N65EF-T1-GE3
framleiðanda : Vishay Siliconix
Lýsing : MOSFET N-CH 650V 19.8A POWERPAK
Series : -
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 650V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 19.8A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 180 mOhm @ 11A, 10V
Vgs (th) (Max) @ kt : 4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs : 102nC @ 10V
Vgs (hámark) : ±30V
Inntaksrýmd (Ciss) (Max) @ Vds : 2396pF @ 100V
FET lögun : -
Dreifing orku (Max) : 156W (Tc)
Vinnuhitastig : -55°C ~ 150°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : PowerPAK® 8 x 8
Pakki / mál : 8-PowerTDFN
þyngd : -
ástand : Nýtt og frumlegt
gæði ábyrgð : 365 dagar ábyrgð
Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein
Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Framleiðanda Part Number
Innri Part Number
framleiðanda
Stutt lýsing
MOSFET N-CH 650V 19.8A POWERPAK
RoHS Staða
Lead frjáls / RoHS samhæft
Sendingartími
1-2 daga
Laus Magn
130610 Pieces
Tilvísun verð
USD 0
Okkar verð
- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

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