forskriftir fyrir SIHB120N60E-GE3

Part Number : SIHB120N60E-GE3
framleiðanda : Vishay Siliconix
Lýsing : MOSFET N-CHAN 650V D2PAK TO-263
Series : E
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 600V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 25A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 120 mOhm @ 12A, 10V
Vgs (th) (Max) @ kt : 5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs : 45nC @ 10V
Vgs (hámark) : ±30V
Inntaksrýmd (Ciss) (Max) @ Vds : 1562pF @ 100V
FET lögun : -
Dreifing orku (Max) : 179W (Tc)
Vinnuhitastig : -55°C ~ 150°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : D²PAK (TO-263)
Pakki / mál : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
þyngd : -
ástand : Nýtt og frumlegt
gæði ábyrgð : 365 dagar ábyrgð
Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein
Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Framleiðanda Part Number
Innri Part Number
framleiðanda
Stutt lýsing
MOSFET N-CHAN 650V D2PAK TO-263
RoHS Staða
Lead frjáls / RoHS samhæft
Sendingartími
1-2 daga
Laus Magn
80620 Pieces
Tilvísun verð
USD 0
Okkar verð
- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

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